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APTM10UM01FAG
Single Switch MOSFET Power Module
SK S D
VDSS = 100V RDSon = 1.5m typ @ Tj = 25C ID = 860A* @ Tc = 25C
Application * Welding converters * Switched Mode Power Supplies * Uninterruptible Power Supplies * Motor control Features * Power MOS V(R) FREDFETs - Low RDSon - Low input and Miller capacitance - Low gate charge - Avalanche energy rated - Fast intrinsic diode - Very rugged * Kelvin source for easy drive * Very low stray inductance - Symmetrical design - M5 power connectors * High level of integration * AlN substrate for improved thermal performance Benefits * Outstanding performance at high frequency operation * Direct mounting to heatsink (isolated package) * Low junction to case thermal resistance * Low profile * RoHS Compliant
G
DK
DK
S
D
SK G
Absolute maximum ratings
Symbol VDSS ID IDM VGS RDSon PD IAR EAR EAS
Parameter Drain - Source Breakdown Voltage Continuous Drain Current Pulsed Drain current Gate - Source Voltage Drain - Source ON Resistance Maximum Power Dissipation Avalanche current (repetitive and non repetitive) Repetitive Avalanche Energy Single Pulse Avalanche Energy Tc = 25C Tc = 80C
Tc = 25C
mJ
These Devices are sensitive to Electrostatic Discharge. Proper Handing Procedures Should Be Followed. See application note APT0502 on www.microsemi.com
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1-6
APTM10UM01FAG- Rev 1
* Specification of MOSFET device but output current must be limited to 500A to not exceed a delta of temperature greater than 100C for the connectors.
July, 2006
Max ratings 100 860 * 640 * 2200 30 1.6 2500 100 50 3000
Unit V A V m W A
APTM10UM01FAG
All ratings @ Tj = 25C unless otherwise specified Electrical Characteristics
Symbol IDSS RDS(on) VGS(th) IGSS Characteristic Zero Gate Voltage Drain Current Drain - Source on Resistance Gate Threshold Voltage Gate - Source Leakage Current Test Conditions
VGS = 0V,VDS = 100V VGS = 0V,VDS = 80V
Min Tj = 25C Tj = 125C
Typ
VGS = 10V, ID = 275A VGS = VDS, ID = 12mA VGS = 30 V, VDS = 0V
1.5 2
Max 500 2000 1.6 4 450
Unit A m V nA
Dynamic Characteristics
Symbol Ciss Coss Crss Qg Qgs Qgd Td(on) Tr Td(off) Tf Eon Eoff Eon Eoff
Characteristic Input Capacitance Output Capacitance Reverse Transfer Capacitance Total gate Charge Gate - Source Charge Gate - Drain Charge Turn-on Delay Time Rise Time Turn-off Delay Time Fall Time Turn-on Switching Energy Turn-off Switching Energy Turn-on Switching Energy Turn-off Switching Energy
Test Conditions VGS = 0V VDS = 25V f = 1MHz VGS = 10V VBus = 50V ID =550A Inductive switching VGS = 15V VBus = 66V ID = 550A R G = 1 Inductive switching @ 25C VGS = 15V, VBus = 66V ID = 550A, R G =1 Inductive switching @ 125C VGS = 15V, VBus = 66V ID = 550A, R G = 1
Min
Typ 60 23 8.8 2100 360 1080 185 270 600 175 3.3 3.6 3.65 3.85
Max
Unit nF
nC
ns
mJ mJ
Source - Drain diode ratings and characteristics
Symbol IS VSD dv/dt trr Qrr Characteristic Continuous Source current (Body diode) Diode Forward Voltage Peak Diode Recovery Reverse Recovery Time Reverse Recovery Charge
Test Conditions
Min
Typ
Tc = 25C Tc = 80C VGS = 0V, IS = - 550A Tj = 25C Tj = 125C Tj = 25C Tj = 125C 2.4 10.2
IS = - 550A VR = 66V diS/dt = 600A/s
Max 860* 640* 1.3 5 190 370
Unit A V V/ns ns C
July, 2006 2-6 APTM10UM01FAG- Rev 1
dv/dt numbers reflect the limitations of the circuit rather than the device itself. IS - 860A di/dt 600A/s VR VDSS Tj 150C
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APTM10UM01FAG
Thermal and package characteristics
Symbol RthJC VISOL TJ TSTG TC Torque Wt Characteristic Junction to Case Thermal Resistance
RMS Isolation Voltage, any terminal to case t =1 min, I Isol<1mA, 50/60Hz
Min 2500 -40 -40 -40 3 2
Typ
Max 0.05 150 125 100 5 3.5 280
Unit C/W V C N.m g
Operating junction temperature range Storage Temperature Range Operating Case Temperature Mounting torque Package Weight To heatsink For terminals M6 M5
SP6 Package outline (dimensions in mm)
See application note APT0601 - Mounting Instructions for SP6 Power Modules on www.microsemi.com
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3-6
APTM10UM01FAG- Rev 1
July, 2006
APTM10UM01FAG
Typical Performance Curve
Maximum Effective Transient Thermal Impedance, Junction to Case vs Pulse Duration 0.06 Thermal Impedance (C/W) 0.05 0.04 0.03 0.02 0.01 0.9 0.7 0.5 0.3 0.1 0.05 0.0001 0.001 0.01 0.1 1 10 Single Pulse
0 0.00001
rectangular Pulse Duration (Seconds) Low Voltage Output Characteristics 720 ID, Drain Current (A)
V GS=15V, 10V & 9V
3500 3000 ID, Drain Current (A) 2500 2000 1500 1000 500 0
Transfert Characteristics
V DS > ID(on)xRDS(on)MAX 250s pulse test @ < 0.5 duty cycle
600 480 360 240 120 0
8V 7V 6V
T J=25C T J=125C T J=-55C
0
4
8
12
16
20
24
28
0
VDS , Drain to Source Voltage (V) RDS(on) vs Drain Current 1.1
VGS =10V
1 2 3 4 5 6 VGS , Gate to Source Voltage (V)
7
RDS(on) Drain to Source ON Resistance
DC Drain Current vs Case Temperature 1000 ID, DC Drain Current (A) 800 600 400 200 0
Normalized to V GS=10V @ 275A
1
0.9
VGS=20V
0.8 0 100 200 300 400 500 600 700 ID, Drain Current (A)
25
50
75
100
125
150
July, 2006 4-6 APTM10UM01FAG- Rev 1
TC, Case Temperature (C)
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APTM10UM01FAG
RDS(on), Drain to Source ON resistance (Normalized) Breakdown Voltage vs Temperature BVDSS, Drain to Source Breakdown Voltage (Normalized) 1.15 1.10 1.05 1.00 0.95 0.90 -50 -25 0 25 50 75 100 125 150 TJ, Junction Temperature (C) Threshold Voltage vs Temperature 1.2 VGS(TH), Threshold Voltage (Normalized) ID, Drain Current (A) 1.1 1.0 0.9 0.8 0.7 0.6 -50 -25 0 25 50 75 100 125 150 TC, Case Temperature (C) Capacitance vs Drain to Source Voltage 1000000 C, Capacitance (pF) ON resistance vs Temperature 2.5 2.0 1.5 1.0 0.5 0.0 -50 -25 0 25 50 75 100 125 150 TJ, Junction Temperature (C) Maximum Safe Operating Area 10000
limited by RDSon
VGS=10V ID= 275A
1000
100s 1ms
100 Single pulse TJ=150C TC=25C 1
10ms
10
1 10 100 VDS , Drain to Source Voltage (V)
VGS, Gate to Source Voltage (V)
Gate Charge vs Gate to Source Voltage 16 14 12 10 8 6 4 2 0 0 500 1000 1500 2000 2500 3000 Gate Charge (nC)
July, 2006
VDS=50V V DS =80V ID=550A TJ=25C V DS =20V
100000
Ciss Coss
10000
Crss
1000 0 10 20 30 40 50 VDS , Drain to Source Voltage (V)
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APTM10UM01FAG- Rev 1
APTM10UM01FAG
Delay Times vs Current 700 600 t d(on) and td(off) (ns)
VDS=66V RG=1 T J=125C L=100H
Rise and Fall times vs Current 350 300 t r and tf (ns)
500 400 300 200 100
t d(off)
250 200 150 100 50
tr
tf
VDS=66V RG=1 T J=125C L=100H
td(on)
0 100
300 500 700 I D, Drain Current (A) Switching Energy vs Current
900
0 100
300 500 700 ID, Drain Current (A)
900
Switching Energy vs Gate Resistance 12
V DS=66V ID=550A T J=125C L=100H
8 Eoff Switching Energy (mJ) 6 4 2 Eoff 0 100 200 300 400 500 600 700 800 900 I D, Drain Current (A) Operating Frequency vs Drain Current IDR, Reverse Drain Current (A) 50 40
ZCS VDS=66V RG=1 TJ=125C L=100H
10 8 6 4 2 0
Eoff
Eon and Eoff (mJ)
Eon
Eon
2
4
6
8
10
12
Gate Resistance (Ohms) Source to Drain Diode Forward Voltage 10000 1000 100 10 1 0.3 0.5 0.7 0.9 1.1 1.3 1.5 VSD, Source to Drain Voltage (V)
July, 2006
Frequency (kHz)
T J=150C T J=25C
30 20 10 0 200
VDS=66V D=50% RG=1 T J=125C T C=75C
ZVS
Hard switching
300
400
500
600
700
800
ID, Drain Current (A)
Microsemi reserves the right to change, without notice, the specifications and information contained herein
Microsemi's products are covered by one or more of U.S patents 4,895,810 5,045,903 5,089,434 5,182,234 5,019,522 5,262,336 6,503,786 5,256,583 4,748,103 5,283,202 5,231,474 5,434,095 5,528,058 and foreign patents. U.S and Foreign patents pending. All Rights Reserved.
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APTM10UM01FAG- Rev 1

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